ACM Research Ships First PECVD SiCN System for Advanced Semiconductor Applications

FREMONT, Calif., April 27, 2026 (GLOBE NEWSWIRE) -- ACM Research, Inc. ("ACM") (NASDAQ: ACMR ), a leading supplier of wafer and panel processing solutions for semiconductor and advanced packaging applications, today announced it has shipped its first plasma-enhanced chemical vapor deposition (PECVD) silicon carbonitride (SiCN) system to a leading semiconductor manufacturer. As the latest addition to the Saturn Series of the ACM Planetary Family, this system met customer-defined process specifications in ACM's Lingang lab and has been shipped to the customer site for validation. Designed to address advanced back-end-of-line (BEOL) requirements, the system also positions ACM to serve the growing opportunity in advanced packaging applications. ACM's PECVD SiCN system is built on a proprietary deposition architecture that departs from conventional approaches by distributing the process across three stations within a single reaction chamber, making it the world's first three-station PECVD design. In this rotating deposition scheme, each station deposits one-third of the total film, enabling tighter control over interface layer formation, gas flow management and film uniformity across the wafer. Complementing this architecture, ACM's "One Station, One RF" control software technology provides independent plasma control at each station through dedicated radio frequency (RF) systems, helping improve process stability and enhance consistency across stations. "The shipment of our first PECVD SiCN system marks an important milestone as ACM continues to expand its process technology capabilities," said Dr. David Wang, President and Chief Executive Officer of ACM. "This platform features an innovative equipment design to support more advanced process requirements and deliver the control and consistency needed for increasingly complex semiconductor manufacturing and next-generation device integration." The system is designed to support PECVD SiCN processes for advanced BEOL applications at 55-nanometer and below, including copper oxidation reduction, copper diffusion ... Full story available on Benzinga.com
2026-04-27 12:20:00